The quantum efficiency value is determined by studying the surface potential development inchalcogenide vitreous semiconductors. Sensitization by a corona discharge in response to exposureto radiation from a Q-switched nanosecond-pulse ruby laser is achieved. A method to calculate thequantum efficiency is presented, and its dependence on parameters such as the exposure momentswitch, temperature, charging electrode potential, and radiation energy density is studied. Themobility of the holes is determined by the time of flight of carrier packets. The observed effects areexplained using the residual conduction mechanism.
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