For InP-bascd Pnp heterojunction bipolar transistors (HBTs), a set of epitaxial layers frequently incorporating quaternaries, is used to make a low resistance electrical contact to the emitter layer. We describe an analytical approach toinvestigate the nonlinear effects of the multiple heterojunction interfaces oil the emitter series resistance and emitter junction current-voltage characteristics of the device. The simulation results show that heterojunction interfaces can contribute asubstantial portion (up to 20%) to the total emitter series resistance, especially at high levels of emitter current.
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