Recently, the accuracy and reliability of the accepted (0/+) donor energy level E{sub}D of the defect EL2 in GaAs, especially as measured by temperature-dependent hall-concentration measurements (Arrhenius plot), have been questioned. Here we show that the accepted Hall-effect value, Ec=0.75 eV, is accurate and reliable; however, it must be remembered that an Arrhenius plot effectively gives E{sub}D at T= 0, whereas experiments such as photoconductivity which rely on a peak or threshold, giveE{sub}D at a particular temperature T. For comparative purpose, we suggest the relationship E{sub}D(T)=(0.75-2.2×10{sup}-4T).
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