Single-heterostructure laser diode producing a 6 W/40 ps optical pulse from a 20 (mu)m stripe width

Brigitte Lanz; Juha T. Kostamovaara; Sergey N. VainshteinVladimir M. LantratovNikolay A. Kalyuzhnyy

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Single-heterostructure laser diode producing a 6 W/40 ps optical pulse from a 20 (mu)m stripe width

机译：Single-heterostructure laser diode producing a 6 W/40 ps optical pulse from a 20 (mu)m stripe width

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摘要

A compact, low-cost semiconductor laser diode producing 40 ps full width at half maximum (FWHM) single-spike lasing pulses with 6 Watts peak power from a 20 (mu)m stripe width is realized in the form of a simple single-heterostructure, grown by metal-organic chemical vapor deposition. The structure possesses a linearly graded doping profile extending from the p~(+) and n~(+) sides towards the p-n junction. This laser diode is operated under room temperature conditions and applies pumping current pulses (roughly 10 to 20 A/2 to 3 ns FWHM) achievable with a commercially available silicon avalanche transistor as an electrical switch.

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来源
《Optical Engineering》 |2012年第5期|050503-1-050503-3|共3页
作者
Brigitte Lanz; Juha T. Kostamovaara; Sergey N. VainshteinVladimir M. LantratovNikolay A. Kalyuzhnyy;
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作者单位

University of Oulu, Department of Electrical Engineering, Electronics Laboratory, P.O. Box 4500, 90014 Oulu, Finland;

Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类计量学;
关键词
semiconductor laser; high-power picosecond pulse; single-heterostructure; gradient doping profile; room temperature; reproducible;

Single-heterostructure laser diode producing a 6 W/40 ps optical pulse from a 20 (mu)m stripe width

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