A novel n-SiC/p-Si heterojunction diode with high-temperature bi-directional N-shaped negitive-diffrentia1-resistances (NRDs) was reported. At room temperature, the device process NDRs with peak-to-valley current ratios (PVCRs) of about 21 and 236 at forward and reverse biases, respective1y. Under reverse biases, this device achieves an NDR with a PVCR of 40 at 200℃. In addition, it possess obvious NDRs even up to 300℃. This high-temperature NDR characteristic provides this novel SiC/Siheterojunction diode a potential for high-temperature applications such as high-temperature solid-state switches.
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