Bias-Dependent Small-Signal MOdeling of GaAs PIN Diodes

Alen Fejzuli; Lawrence Dunleavy; Arthur SniderDon Allen

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Bias-Dependent Small-Signal MOdeling of GaAs PIN Diodes

机译：Bias-Dependent Small-Signal MOdeling of GaAs PIN Diodes

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摘要

A new bias-dependent small-signal GaAs PIN diode model is described that is suitable for use in design of circuits like variable attenuators and limiters. The equivalent circuit parameters are extracted from bias-dependent S-parameters measured from 1 to 26 GHz for 35 bias currents. Bias-dependent equations are then curve fitted, and then incorporated into a commercially available computer-aided design (CAD) simulator. Measured and modeled data track each other very well over a range of bias conditions.

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《International journal of RF and microwave computer-aided engineering》 |2001年第2期|99-106|共8页
作者
Alen Fejzuli; Lawrence Dunleavy; Arthur SniderDon Allen;
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作者单位

JDS Uniphase, 305 East Drive, Melbourne, Florida;

Department of Electrical Engineering, University of South Florida, Wireless and Microwave (WAMI) Program, 4202 E. Fowler Ave. ENB118, Tampa, Florida 33620;

Triquint Semiconductor, 13510 North Central Expressway, PO Box 655474, Dallas, Texas 75265;

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正文语种英语
中图分类计算技术、计算机技术;
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Bias-Dependent Small-Signal MOdeling of GaAs PIN Diodes

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