Simulations of nanograting-assisted light coupling in GaN planar waveguide

R. Dylewicz; R. A. Hogg; R. AireyR. PaszkiewiczP. BientsmanS. Patela

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Simulations of nanograting-assisted light coupling in GaN planar waveguide

机译：Simulations of nanograting-assisted light coupling in GaN planar waveguide

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The numerical simulations of nanogratings integrated with gallium nitride (GaN)planarwaveguides aswell as the experimental in-coupling results are presented.Asimulation tool based on the eigenmode expansion method and advanced boundary conditions provided a rigorous model of 400-nm-period grating couplers.Afull-vectorial Maxwell solver allowedperforming a number of simulations with varying grating parameters, where coupling efficiency,reflection and transmission characteristics of device were calculated. Gratings with different etch depths and arbitrary shapes were simulated using a staircase approximation,with an optimized number of steps per single slope. For the first time, an impact of dry etch processing on GaN coupler efficiency was evaluated, due to the inclusion of the sloped sidewalls, with regard to the technological constrains. Finally, the experimental results in thevisible spectrum region (λ = 633 nm), for 400-nm-deep gratings etched in GaN waveguide,were presented together with theoretical data for binary and trapezoidal profiles of a grating,for different optical mode profiles (TE_0 ÷ TE_3 modes).

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《Optical and Quantum Electronics》 |2010年第10期|619-629|共11页
作者
R. Dylewicz; R. A. Hogg; R. AireyR. PaszkiewiczP. BientsmanS. Patela;
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作者单位

Faculty of Microsystem Electronics and Photonics,Wroclaw University of Technology, Wroclaw, Poland;

Department of Electronic and Electrical Engineering, EPSRC National Center for III–V Technologies,University of Sheffield, Sheffield, UK;

Department of Information Technology, Ghent University/IMEC, Ghent, Belgium;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学;
关键词
Integrated optics; Planar waveguide; Grating coupler; Gallium nitride; Numerical simulations; Dry etching process; Semiconductor processing; III–V semiconductor materials;

Simulations of nanograting-assisted light coupling in GaN planar waveguide

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