• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced functional materials >Reconfigurable Carbon Nanotube Barristor
【24h】

Reconfigurable Carbon Nanotube Barristor

机译：Reconfigurable Carbon Nanotube Barristor

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相关主题

摘要

As the semiconductor industry enters the post-Moore era, reconfigurability on the device level, that incorporates multifunction in a device unit to realize more complex systems with more compact logic gates, is a promising methodology to extend the development of integrated circuit industry. Here, a reconfigurable carbon nanotube (CNT) barristor is developed on the basis of a Schottky barrier (SB) CNT transistor. The device shows a significant rectifying characteristic and can be reconfigured to a forward rectifying mode or a backward rectifying mode by applying an appropriate gate voltage. The reconfigurability originates from the ambipolar characteristics of the CNT channel, and the rectification behaviors can be attributed to the drain-induced self-gating effect. Additional experiments reveal that it is the interfacial charge redistribution that plays the role of an additional gate on the SB near the drain. A gate-controllable half-wave rectifier has been fabricated by using the reconfigurable CNT barristor. The CNT barristor brings new functions to CNT electronic devices and also opens up a new methodology for future reconfigurable device design.

著录项

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号