FABRICATION AND LOW THRESHOLD CURRENT DENSITY CW OPERATION OF GAINASP/INP MULTIPLE-REFLECTOR MICROCAVITY LASER

Shin KC.; Serizawa N.; Kurihashi S.Tamura S.Arai S.Tamura M.

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FABRICATION AND LOW THRESHOLD CURRENT DENSITY CW OPERATION OF GAINASP/INP MULTIPLE-REFLECTOR MICROCAVITY LASER

机译：FABRICATION AND LOW THRESHOLD CURRENT DENSITY CW OPERATION OF GAINASP/INP MULTIPLE-REFLECTOR MICROCAVITY LASER

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We report CW operation of a GalnAsP/lnP multiple-reflector microcavity (MRMC) laser operated at fairly low threshold current density. The threshold current density with broad contact (stripe width W = 240 mu m, cavity length L = 60 mu m) under pulsed operation was 180 A cm(-2) (I-th = 20 mA), and was 230 A cm(-2) under CW operation at room temperature operating at 1.52 mu m wavelength. [References: 14]

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来源
《Optical and Quantum Electronics》 |1996年第5期|487-493|共7页
作者
Shin KC.; Serizawa N.; Kurihashi S.Tamura S.Arai S.Tamura M.;
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作者单位

TOKYO INST TECHNOL RES CTR QUANTUM EFFECT ELECTR MEGURO KU 2-12-1 OOKAYAMA TOKYO 152 JAPAN;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学;
关键词
Quantum-well lasers; Semiconductor-lasers; Modulation;

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FABRICATION AND LOW THRESHOLD CURRENT DENSITY CW OPERATION OF GAINASP/INP MULTIPLE-REFLECTOR MICROCAVITY LASER

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