A formula formulatype='inline' img src='/images/tex/550.gif' alt='G' /formula-Band Four-Element Butler Matrix in 0.13 μm SiGe BiCMOS Technology

Elkhouly M.; Mao Y.; Meliani C.Scheytt J.C.Ellinger F.

首页> 外文期刊>IEEE Journal of Solid-State Circuits >A formula formulatype='inline' img src='/images/tex/550.gif' alt='G' /formula-Band Four-Element Butler Matrix in 0.13 μm SiGe BiCMOS Technology

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A formula formulatype='inline' img src='/images/tex/550.gif' alt='G' /formula-Band Four-Element Butler Matrix in 0.13 μm SiGe BiCMOS Technology

机译：A formula formulatype="inline" img src="/images/tex/550.gif" alt="G" /formula-Band Four-Element Butler Matrix in 0.13 μm SiGe BiCMOS Technology

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This paper presents the design and characterization of a 220–240 GHz four-element Butler matrix beam switching chip. It is realized in 0.13 μm SiGe BiCMOS technology. The chip features four 220 GHz amplifiers with 9 dB of gain followed by the Butler matrix core. A single-pole-four-throw (SP4T) switch is integrated to switch between the different beam directions. Finally an amplifier is used to compensate the losses of the matrix core and the switch. The chip exhibits a 2 dB of insertion loss and draws 104 mA from a 3.3 V supply. It also shows maximum phase error of 15° from the ideal phase states and less than 4 dB rms amplitude variations. The chip occupies 1.5 × 2.4 mm 2 silicon area.

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来源
《IEEE Journal of Solid-State Circuits》 |2014年第9期|1916-1926|共11页
作者
Elkhouly M.; Mao Y.; Meliani C.Scheytt J.C.Ellinger F.;
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作者单位

IHP, Frankfurt (Oder), Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Arrays; Butler matrices; Couplers; Gain; Noise measurement; Receivers; Switches; BiCMOS; Butler matrix; SiGe; millimeter-wave; phased array;

A formula formulatype='inline' img src='/images/tex/550.gif' alt='G' /formula-Band Four-Element Butler Matrix in 0.13 μm SiGe BiCMOS Technology

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