A 250 mV 7.5 μW 61 dB SNDR SC ΔΣ Modulator Using Near-Threshold-Voltage-Biased Inverter Amplifiers in 130 nm CMOS

Michel F.; Steyaert M. S. J.

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A 250 mV 7.5 μW 61 dB SNDR SC ΔΣ Modulator Using Near-Threshold-Voltage-Biased Inverter Amplifiers in 130 nm CMOS

机译：A 250 mV 7.5 μW 61 dB SNDR SC ΔΣ Modulator Using Near-Threshold-Voltage-Biased Inverter Amplifiers in 130 nm CMOS

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摘要

An ultra-low voltage switched-capacitor (SC) $DeltaSigma$ converter running at a record low supply voltage of only 250 mV is introduced. System level aspects are discussed and special circuit techniques described, that enable robust operation at such a low supply voltage. Using a SC biasing approach, inverter-based integrators are realized with overdrives close to the transistor threshold voltage $V_{rm th}$ while compensating for process, voltage and temperature (PVT) variation. Biasing voltages are generated on-chip using a novel level shifting circuit, that overcomes headroom limitations due to saturation voltage $V_{rm sat}$. With an oversampling ratio (OSR) of 70 and a sampling frequency $(f_{S})$ of 1.4 MHz at 250 mV power supply the converter achieves 61 dB SNDR in 10 kHz bandwidth while consuming a total power of 7.5 $mu{hbox{W}}$.

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来源
《IEEE Journal of Solid-State Circuits》 |2012年第3期|709-721|共13页
作者
Michel F.; Steyaert M. S. J.;
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作者单位

Department of Electrical Engineering, ESAT-MICAS, Katholieke Universiteit Leuven, Heverlee, Belgium;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Analog integrated circuits; analog-to-digital converter; delta-sigma; inverter-based switched capacitor circuits; low power; ultra-low voltage;

A 250 mV 7.5 μW 61 dB SNDR SC ΔΣ Modulator Using Near-Threshold-Voltage-Biased Inverter Amplifiers in 130 nm CMOS

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