Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

Aitian Chen; Ren-Ci Peng; Bin FangTiannan YangYan WenDongxing ZhengChenhui ZhangChen LiuZibin LiPeisen LiYan LiYonggang ZhaoCe-Wen NanZiqiang QiuLong-Qing ChenXi-Xiang Zhang

首页> 外文期刊>Advanced functional materials >Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

【24h】

Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

机译：Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

The magnetoelectric effect is technologically appealing because of its abilityto manipulate magnetism using an electric field rather than magnetic fieldor current, thus providing a promising solution for the development ofenergy-efficient spintronics. Although 180° magnetization switching is vitalto spintronic devices, the achievement of 180° magnetization switching viamagnetoelectric coupling is still a fundamental challenge. Herein, voltagedrivenfull resistance switching of a magnetic tunnel junction (MTJ) withdipole interaction on a ferroelectric substrate through switchable parallel/antiparallel magnetization alignment is demonstrated. Parallel magnetizationalignment along the y direction is obtained under a bias magnetic field. Byrotating the magnetic easy axis via strain-mediated magnetoelectric coupling,the parallel magnetizations in the MTJ reorient to the x axis with oppositepaths because of dipole interaction, thus resulting in antiparallel alignment.Moreover, this voltage switching of MTJs is nonvolatile owing to variationsin dipole interaction and can be well understood via phase field simulations.The results provide an avenue to realize electrical switching of MTJs and aresignificant for exploring energy-efficient spintronic devices.

著录项

来源
《Advanced functional materials》 |2023年第23期|2213402.1-2213402.8|共8页
作者
Aitian Chen; Ren-Ci Peng; Bin FangTiannan YangYan WenDongxing ZhengChenhui ZhangChen LiuZibin LiPeisen LiYan LiYonggang ZhaoCe-Wen NanZiqiang QiuLong-Qing ChenXi-Xiang Zhang;
展开▼
作者单位

Physical Science and Engineering DivisionKing Abdullah University of Science and TechnologyThuwal 23955–6900, Saudi Arabia;

College of Intelligence Science and TechnologyNational University of Defense TechnologyChangsha 410 073, China;

Department of Physics and State Key Laboratory of Low-DimensionalQuantum PhysicsTsinghua UniversityBeijing 100084, ChinaState Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing 100084, ChinaDepartment of PhysicsUniversity of California at BerkeleyBerkeley, CA 94720, USADepartment of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity Park, PA 16802, USASchool of Advanced Materials and NanotechnologyXidian UniversityXi’an 710126, China;

展开▼
收录信息
原文格式 PDF
正文语种英语
中图分类
关键词
dipole interactions; magnetic tunnel junctions; magnetoelectric coupling; multiferroic heterostructures; spintronic devices;

Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

摘要

著录项

相关主题

期刊订阅