Calculations of electron-acoustic phonon interaction and phonon absorption of Si(00l) inversion layer have been studied at low temperature for the MOSFET structure by using displaced Fermi-Dirac distribution function. The strong dependence of normalized dc field on emission and absorption of phonons has been analyzed. If the electron drift velocity is higher (smaller) than sound velocity, phonon emission (absorption) takes place. The numerically calculated phonon absorption shows a good agreement with the existing experimental data. The dependence of layer thickness on scattering rate has been discussed.
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