Design and fabrication of compact nonblocking 4 X 4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching

Jingwei Liu; Jinzhong Yu; Shaowu ChenZhiyong Li

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Design and fabrication of compact nonblocking 4 X 4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching

机译：Design and fabrication of compact nonblocking 4 X 4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching

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摘要

A folding nonblocking 4 X 4 optical matrix switch in simplified-tree architecture was designed and fabricated on a silicon-on-insulator wafer. To compress chip size, switch elements (SEs) were connected by total internal reflection mirrors instead of conventional S-bends. For obtaining smooth interfaces, potassium hydroxide (KOH) anisotropic chemical etching of silicon was employed. The device has a compact size of 20 X 3.2 mm~(2) and a fast response of 8+-1 (mu)s. Power consumption of 2 X 2 SE and excess loss per mirror were 145 mW and -1.1 dB, respectively.

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来源
《Optical Engineering》 |2005年第7期|070503-1-070503-3-0|共3页
作者
Jingwei Liu; Jinzhong Yu; Shaowu ChenZhiyong Li;
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作者单位

State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Science Beijing 100083, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学仪器;
关键词
optical matrix switch; chemical etching; silicon-on-insulator; total internal reflection mirror;

Design and fabrication of compact nonblocking 4 X 4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching

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