High-Throughput Screening Thickness-Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse

Mingkai Tang; Liyufen Dai; Mingqiang ChengYuan ZhangYanghe WangXiangli ZhongJinbin WangFeng AnMing MaMingqiang HuangChangjian LiJiangyu LiGaokuo Zhong

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High-Throughput Screening Thickness-Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse

机译：High-Throughput Screening Thickness-Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse

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摘要

The functionalities and applications of oxide thin films are highly dependenton their thickness. Most thickness-dependent studies on oxide thin filmsrequire the preparation of independent samples, which is labor-intensive andtime-consuming and inevitably introduces experimental errors. To addressthis challenge, a general strategy based on high-throughput pulsed laserdeposition technology is proposed to precisely control the thin-film thicknessin local regions under similar growth conditions. The as-proposed synthesisstrategy is demonstrated using typical complex oxide materials of SrTiO_3(STO). Consequently, high-throughput STO thin films with nine gradientthicknesses ranging from 10.1 to 30.5 nm are fabricated. Notably, a transitionfrom the unipolar to the bipolar resistive switching mode is observed withincreasing STO thickness. Moreover, a physical mechanism based on theheterostructure-mediated redistribution of oxygen vacancies is employed tointerpret the transition between the two memristive patterns. The screeningof STO thin films with different resistive switching behaviors revealed thatthe STO thin film with a thickness of 20.3 nm exhibit excellent conductancemodulation properties under the application of electrical pulses as well as significantreliability for the emulation of various synaptic functions, rendering ita promising material for artificial neuromorphic computing applications.

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来源
《Advanced functional materials》 |2023年第23期|2213874.1-2213874.7|共7页
作者
Mingkai Tang; Liyufen Dai; Mingqiang ChengYuan ZhangYanghe WangXiangli ZhongJinbin WangFeng AnMing MaMingqiang HuangChangjian LiJiangyu LiGaokuo Zhong;
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作者单位

School of Materials Science and EngineeringXiangtan UniversityXiangtan, Hunan 411105, China Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen, Guangdong 518055, China;

Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen, Guangdong 518055, China Guangdong Provincial Key Laboratory of FunctionalOxide Materials and DevicesSouthern University of Science and TechnologyShenzhen;

Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen, Guangdong 518055, China Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen, Guangdong 518055, China Guangdong Provincial Key LSchool of Materials Science and EngineeringXiangtan UniversityXiangtan, Hunan 411105, ChinaShenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen, Guangdong 518055, China;

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正文语种英语
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high-throughput; memristors; oxygen vacancies; SrTiO_3; thin films;

High-Throughput Screening Thickness-Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse

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