A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-italicμ/italicm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation

Min-Sun Keel; Daeyun Kim; Yeomyung KimMyunghan BaeMyoungoh KiBumsik ChungSooho SonHoyong LeeSeung-Chul ShinMyeonggyun KyeJaeil AnYonghun KwonSungyoung SeoSunghyuck ChoYoungchan KimYoung-Gu JinYoungsun OhYitae KimJungchak AhnJesuk Lee

首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-italicμ/italicm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation

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A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-italicμ/italicm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation

机译：A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-italicμ/italicm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation

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摘要

A 1.2-Mpixel indirect time-of-flight (ToF) CMOS image sensor is presented to lower peak current and to cancel out multi-user interference. The proposed 4-tap 3.5-inline-formula tex-math notation="LaTeX"$mu text{m}$ /tex-math/inline-formula demodulation pixel is optimally designed to improve quantum efficiency (QE) and demodulation contrast (DC). A new “multiple-interleaving” scheme is proposed to reduce the peak current and self-compensate fixed-pattern phase noise (FPPN) with the minimal side effect of DC imbalance. To cancel out interference from the other ToF sensors, a multi-user interference cancellation (MUIC) scheme based on pseudorandom modulation is adopted. From the measurement results, we achieve a high QE of 38% at 940 nm and a high DC of 96% and 80% at 100- and 200-MHz modulation frequencies, respectively. With the superior pixel performance, the depth noise of 0.92% and 0.3% is achieved at the full and 2 inline-formula tex-math notation="LaTeX"$times $ /tex-math/inline-formula 2 binning modes, respectively. The multiple-interleaving scheme suppresses the peak current to less than 0.9 A and removes the column FPPN with constant DC for the whole pixel array. The proposed MUIC proves that at least two interferers can be successfully rejected. The sensor chip is fabricated in a two-stack process with 65 nm for the top die and 65 nm for the bottom die.

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来源
《IEEE Journal of Solid-State Circuits》 |2021年第11期|3209-3219|共11页
作者
Min-Sun Keel; Daeyun Kim; Yeomyung KimMyunghan BaeMyoungoh KiBumsik ChungSooho SonHoyong LeeSeung-Chul ShinMyeonggyun KyeJaeil AnYonghun KwonSungyoung SeoSunghyuck ChoYoungchan KimYoung-Gu JinYoungsun OhYitae KimJungchak AhnJesuk Lee;
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作者单位

Samsung Electronics, Hwaseong, South Korea;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Sensors; Clocks; Demodulation; Spatial resolution; Sensor arrays; Delays; Image color analysis; 3-D imaging; CMOS image sensor; demodulation pixel; depth sensor; time-of-flight (ToF);

A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-italicμ/italicm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation

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