A multilayered infrared Ge/Si quantum-dot photodetector is fabricated by pulsed laser deposition. Forty successive Ge quantum dot layers, each covered with a thin Si layer, are deposited. Deposition is monitored by in situ reflection high-energy electron diffraction and the morphology is further studied by ex situ atomic force microscopy. Currentvoltage measurements reveal typical diode characteristics, while responsivity measurements show an absorption peak around a 2-(mu)m wavelength.
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