This article presents the design and test data for a 10W broadband balanced limiter/LNA MMIC fabricated using MSAG MESFET process. The limiter is based on Schottky diodes and the two-stage LNA is designed using high-performance MESFETs. The typical measured performance for the limiter/LNA circuit includes gain greater than 14 dB, NF less than 2.7 dB, and return loss better than 20 dB over the 8.5-11.5 GHz frequency range. The CW power handling for the packaged limiter/LNA circuits was greater than 10W. The packaged devices were also exposed to power levels greater than 10W, and no catastrophic failures were observed up to 18W.
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