...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optical Engineering >Optical radiation and temperature-dependent microwave performance of optically biased GaAs metal-semiconductor field effect transistor
【24h】

Optical radiation and temperature-dependent microwave performance of optically biased GaAs metal-semiconductor field effect transistor

机译：Optical radiation and temperature-dependent microwave performance of optically biased GaAs metal-semiconductor field effect transistor

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相关主题

摘要

A physics-based analytical model for an optically biased GaAs metal-semiconductor field effect transistor, suitable for simulating optoelectronic integrated circuits, is presented. The main objective of the model is to show the effect of optical radiation and temperature on important parameters such as the bandgap energy, mobility, and carrier lifetime. It is found that optical radiation has negligible effect on these parameters, but the temperature affects them significantly. The effect of different scattering mechanisms on the drain-source current is also studied. Using this analysis, the model extends to describe optical radiation and temperature-dependent device characteristics such as the threshold voltage, transconductance, cutoff frequency, transit time, and responsivity. Under illumination, a significant enhancement in device transconductance leading to an increase in cutoff frequency is observed.

著录项

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号