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Engineering of Chemical Vapor Deposition Graphene Layers: Growth, Characterization, and Properties

机译:Engineering of Chemical Vapor Deposition Graphene Layers: Growth, Characterization, and Properties

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摘要

Numerous studies conducted on the layered graphene family—including themonolayer, bilayer, trilayer, few-layer, and multilayer—draw plenty of attentionto stacking modes and twist angles, which are extensively explored for itscontrolled growth, properties, and applications. This review provides a comprehensiveoverview of current challenges and opportunities for the chemicalvapor deposition (CVD) growth, characterization, and electrical properties ofgraphene depending on the layer number and twist angles. Various stateof-the-art innovations using the CVD method, which incorporates graphenesynthesis through the control of metal substrates, layer numbers, and twistangles, are presented. The underlying growth mechanisms are discussed interms of the interactions among graphene substrates/layers and its dynamicprocess. The characterization methods for determining the layer number andtwist angle of graphene layers are summarized. Furthermore, the electricalproperties and applications of graphene, particularly magic-angle twist bilayergraphene, are briefly introduced. Finally, outlooks and perspectives for theengineering of CVD graphene layers are discussed.

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