This dissertation demonstrates the reliability issues associated with the temperature of Ge multi‐channel fin shaped field‐effect transistor (Mch‐FinFET). Temperature dependence on short channel effectss such as threshold voltage (Vth), sub‐threshold swing (SS), and switching ratio are observed. The variation in temperature on various important radio frequency (RE)/analog, linearity, and harmonic distortion characteristics are studied and analyzed over a wide range of temperatures (300–500 K). The simulation study revealed that Mch‐FinFET devices exhibit 61.6% improvement in ION with minimum SS value. The improvement of SS, switching ratio and Vth can be observed with temperature fall. The enhancement in performance of various RF/analog attributes such transconductance, device efficiency, transconductance frequency product, gain frequency product, cut‐off frequency, and intrinsic gain with lowering of temperature. However, Mch‐FinFET device provides a significant improvement of higher‐order current and voltage intercept points such as IIP3, VIP2, VIP3, and 1 dB compression point with lesser harmonic distortion such as HD2, HD3, and THD at elevated temperature. The superior efficiency of DC and RF/analog attributes, greater linearity, and minor harmonic distortion performance of Mch‐FinFET make it more considerable to design low power Complementary metal–oxide–semiconductor (CMOS) circuits.
展开▼
