机译:Buried graphene heterostructures for electrostatic doping of low-dimensional materials
TU Dortmund Univ;
Univ Cambridge;
low-dimensional materials; graphene-heterostructures; electrostatic doping; buried triple gates; steep slope transistors; carbon nanotube transistors; FIELD-EFFECT TRANSISTORS; CARBON; PERFORMANCE; FETS; DEPOSITION; IMPACT;