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Sub 0.5 Volt Graphene-hBN van der Waals Nanoelectromechanical (NEM) Switches

机译:Sub 0.5 Volt Graphene-hBN van der Waals Nanoelectromechanical (NEM) Switches

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摘要

The Nanoelectromechanical (NEM) switches are a promising candidateto overcome the physical limitations of the complementary metal-oxidesemiconductor(CMOS) switches due to their quasi-zero leakage behavior,sub-thermal switching, and suitability to operate in harsh environments. Themain obstacles affecting NEM switches are their irreversible switch-contactstiction, the large switching voltage, and its hysteretic loop. In this study,the irreversible static friction is overcome by employing the weak van derWaals (vdW) bonding of graphene-hexagonal boron nitride (hBN) contact inthe Graphene NEM (GNEM) switches. These vdW switches show sub-0.5 Vswitching voltage with an ON/OFF ratio higher than 105 and nearly zero hystereticwindow characteristics with a high endurance of over 50 000 switchingcycles. These remarkable performances are achieved by exploiting graphene’smonolayer thickness, high Young’s modulus, cubic mechanical restoringforce, and low vdW binding energy characteristics. As chemical vapor depositiongraphene and hBN are used in these GNEM switches, it exhibits theprospect for large-scale graphene NEM system applications. These GNEMswitches can be potentially used in ultralow-power CMOS integrated circuits,hybrid NEM-CMOS systems, logic devices, NEM resonator mass sensing,and single-molecule sensors.

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