In-Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO_3 Interfaces

Jie Sun; Yiming Li; Yangjun OuQianwei HuangXiaozhou LiaoZibin ChenXiaojie ChaiXiao ZhuangWendi ZhangChao WangJun JiangAnquan Jiang

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In-Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO_3 Interfaces

机译：In-Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO_3 Interfaces

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Direct data processing in nonvolatile memories can enable area- andenergy-efficient computation, unlike independent performance betweenseparate processing and memory units; repetitive data transfer betweenthese units represents a fundamental performance limitation in moderncomputers. Spatially mobile conducting domain walls in ferroelectrics canbe redirected between drain, gate, and source electrodes to function asnonvolatile transistors with superior energy efficiency, ultrafast operatingand communication speeds, and high logic/storage densities. Here, inmemorycomputing is demonstrated using multilevel domain wall diodesat LiNbO_3 interfaces. Ultrathin domains within interfacial layers betweeneach mesa-like memory cell and the contact electrodes can rectify diodelikedomain wall currents with on/off current ratios exceeding 10~7 at lowoperating voltages, surpassing the performance of traditional p-n junctionsusing built-in potentials across depletion layers. NOT, NAND, and NORgate logic functions are demonstrated, providing insights into high-densityintegration of multilevel storage and computational units in all-ferroelectricdomain wall devices.

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来源
《Advanced functional materials》 |2022年第49期|2207418.1-2207418.9|共9页
作者
Jie Sun; Yiming Li; Yangjun OuQianwei HuangXiaozhou LiaoZibin ChenXiaojie ChaiXiao ZhuangWendi ZhangChao WangJun JiangAnquan Jiang;
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Shanxi Key Laboratory of Micro Nano Sensors & Artificial IntelligencePerceptionCollege of Information and ComputerTaiyuan University of TechnologyTaiyuan 030024, China;

State Key Laboratory of ASIC & SystemSchool of MicroelectronicsFudan UniversityShanghai 200433, China;

School of AerospaceMechanical and Mechatronic EngineeringThe University of SydneySydney, NSW 2006, AustraliaDepartment of Industrial and Systems EngineeringThe Hong Kong Polytechnic UniversityHong Kong, China;

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In-Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO_3 Interfaces

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