By adoption of a high permittivity ZrO2 capping layer (ZOCL), enhanced ferroelectric properties were achieved in the Hf0.5Zr0.5O2 (HZO) thin films. For HZO thin film with 10 angstrom ZOCL, the 2P ( r ) value can reach as high as similar to 43.1 mu C cm(-2) under a sweep electric field of 3 MV cm(-1). In addition, a reduced coercive field of 1.5 MV cm(-1) was observed, which is comparable to that of HZO with metallic CL. Furthermore, the homogeneity of ferroelectric orthorhombic phase in HZO films was observed to be clearly increased, as evidenced by nanoscale piezoelectric force microscopy measurements. These results demonstrate that ZOCL is very favorable for high performance ferroelectric HZO films and their future device applications.
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