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Hierarchical Doping Engineering with Active/Inert Dual Elements Stabilizes LiCoO_2 to 4.6 V

机译:Hierarchical Doping Engineering with Active/Inert Dual Elements Stabilizes LiCoO_2 to 4.6 V

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摘要

It is highly desirable to raise the charge cutoff voltage to realize the potentialof LiCoO_2 (LCO) with its ultra-high theoretical capacity of 275 mAh g~(-1). However,rapid fading due to structure collapse caused by the formation of theH1-3 metastable phase and the release of surface lattice oxygen has largelyhindered the operation of LCO under voltages of higher than 4.55 V. Here,stable cycling of LCO at 4.6 V through hierarchical doping engineering withinert P-outside and active Ni-inside dual doping is achieved. This ingeniousoutside-in structure design enables Ni~(2+) occupation in the Li layer in the bulklayered phase and P gradient doping at the superficial lattice. Compared withthe conventional inert element substitution strategy, the doped active Ni~(2+)can not only serve as a “pillar” to restrain the formation of the metastableH1-3 phase, but also regulate the electronic structure of LCO and trigger thesuperexchange interaction of Ni~(2+)-O-Co~(4+), together with strong P–O coordinationto substantially suppress the lattice oxygen escape from the surface.Therefore, it considerably reduces the risk of layer structure collapse andconsequently achieves stable and high-capacity operation over 4.6 V. Thishierarchical outside-in doping strategy may serve as inspiration for stabilizinghigh energy electrode materials working under high voltages.

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