机译:Design of p-WSe_2/n-Ge Heterojunctions for High-Speed Broadband Photodetectors
Soongsil Univ, Sch Elect Engn, Seoul 06938, South Korea;
Ajou Univ, Dept Elect & Comp Engn, Suwon 16499, South Korea;
Yonsei Univ, Dept Syst Semicond Engn, Seoul 03722, South Korea|Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South KoreaYonsei Univ, Dept Elect & Elect Engn, Seoul 03722, South Korea;
broadbands; heterojunctions; high-speed; ion-implantation; photodetectors; p-WSe; (2); n-Ge diodes;