Abstract A photodetector (PD) is an optoelectronic device that converts incident light or other electromagnetic radiation from the UV, visible, and infrared spectral ranges into electrical signals. In this paper, we use organometal halide perovskite material to enhance the performance of optoelectronic devices. Due to the unique properties of these materials, photodetectors made of perovskite materials have demonstrated remarkable performance. To analyze the performance of a photodetector, we simulate a CH3NH3PbBr3 perovskite-based device. The multiple layers of the device can be optimized using numerical simulation techniques, which enhances the performance of the device. We obtained the best performance of the device by optimizing the thickness of the absorber layer (980 nm), doping, and defect density of the buffer and absorber layer. For the incident light at 730 nm, a maximum current density of 25.33 mA/cm2 and quantum efficiency (QE) are achieved. The responsivity (R) of the proposed perovskite-based photodetector was calculated as 0.56 A/W, and the detectivity (D*) was 4.5 × 1011 Jones. The results obtained in this work pave the way for future research in photodetectors. All simulations in this study were performed using the SCAPS-1D Simulator.
展开▼
