Design and Analysis of a Radiation Resistant 12T SRAM Cell for Aerospace Applications

Pavankumar Bikki; M.L.V.V. Bharathi; K. Jyothi

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Design and Analysis of a Radiation Resistant 12T SRAM Cell for Aerospace Applications

机译：Design and Analysis of a Radiation Resistant 12T SRAM Cell for Aerospace Applications

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Introduction: Advanced low-power designs have been scaled down to the device parameters that increase single-event multi-node upset in memory elements. This degradation of the stability of the memory elements in aerospace applications is due to the high radiation environment and rapid temperature changes. Methods: Hence, this paper presents a comprehensive treatment model for hardened storage elements with a soft error resulting in multi-node upset. A novel 12T SRAM memory cell configuration has been proposed, analysed, and simulated using Cadence Virtuoso gpdk 45 nm CMOS technology. Results: The proposed design counteracts the positive feedback induced due to the charged ion strike, as in past technical literature. The radiation environment has been realized with double exponential current sources, and temperature analysis has been carried out under parametric analysis. Conclusion: The novel 12T achieves good stability and remains resilient to bit-flip due to ion strikes for a wider range of voltage when the temperature varies from -50°C to 200°C. Moreover, the proposed structure features a lower susceptibility to single event upset, less write and read time, and reduced area compared to the reported RSP 14T.

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来源
《Recent advances in electrical & electronic engineering》 |2023年第4期|372-379|共8页
作者
Pavankumar Bikki; M.L.V.V. Bharathi; K. Jyothi;
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作者单位

B V Raju Institute of Technology,Department of Electronics and Communication Engineering,Telangana,Narsapur,India,;

National Institute of Technology,Department of Electronics and Communication Engineering,Andhra Pradesh,India,;

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原文格式 PDF
正文语种英语
中图分类无线电电子学、电信技术;
关键词
Single node upset; multi-node upset; radiation; hardened SRAM; soft error; stability.;

Design and Analysis of a Radiation Resistant 12T SRAM Cell for Aerospace Applications

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