Laser-Induced Secondary Crystallization of CsPbBr_3 Perovskite Film for Robust and Low Threshold Amplified Spontaneous Emission

Yueqing Shi; Ruxue Li; Guoxin YinXuanyu ZhangXuanchi YuBingheng MengZhipeng WeiRui Chen

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Laser-Induced Secondary Crystallization of CsPbBr_3 Perovskite Film for Robust and Low Threshold Amplified Spontaneous Emission

机译：Laser-Induced Secondary Crystallization of CsPbBr_3 Perovskite Film for Robust and Low Threshold Amplified Spontaneous Emission

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All-inorganic perovskite nanocrystals (NCs) have received extensive attentionfor next-generation thin film devices due to their excellent optical properties,such as strong light absorption, high carrier mobility, and defect tolerance.However, significant challenges remain to obtain high-quality perovskite thinfilms. Herein, a simple but effective post-treatment by laser irradiation forCsPbBr3 NCs thin films is reported. Laser-induced secondary crystallizationis observed in CsPbBr_3 NCs thin films after treatment. In addition, amplifiedspontaneous emission (ASE) with a low threshold (5.6 μJ cm~(?2)) and ahigh gain value (743 cm~(–1)) is achieved. Based on optical measurements, itis attributed to the low defect density, reduced Auger recombination, andweak exciton–phonon interactions, which greatly suppress the nonradiativerecombination channels. The ASE from the film after treatment has a highcharacteristic temperature (134 K), showing a stable optical gain performancethat maintains its intensity for 35 h at room temperature (and 12 h at 40 ℃).Finally, the proof-of-concept demonstration of graphic coding is shown. Thisstudy deepens the understanding of the optical gain mechanism of CsPbBr3perovskite films and provides a simple and convenient laser treatment thatenables the fabrication of high-quality CsPbBr_3 perovskite thin films.

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《Advanced functional materials》 |2022年第49期|2207206.1-2207206.9|共9页
作者
Yueqing Shi; Ruxue Li; Guoxin YinXuanyu ZhangXuanchi YuBingheng MengZhipeng WeiRui Chen;
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Department of Electrical and Electronic EngineeringSouthern University of Science and TechnologyShenzhen 518055, P. R. China;

Department of Electrical and Electronic EngineeringSouthern University of Science and TechnologyShenzhen 518055, P. R. China School of Microelectronics and Materials EngineeringGuangxi University of Science and TechnologyLiuzhou, Guangxi 545006, P. R. Chi;

Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen, Guangdong 518055, P. R. ChinaState Key Laboratory of High Power Semiconductor LaserSchool of PhysicsChangchun University of Science and TechnologyChangchun, Jilin 130022, P. R. China;

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laser-induced secondary crystallizations; nonradiative recombinations; optical gain; perovskite nanocrystals; thin films;

Laser-Induced Secondary Crystallization of CsPbBr_3 Perovskite Film for Robust and Low Threshold Amplified Spontaneous Emission

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