Low-noise amplifiers (LNAs) with low-noise performance are critical components in communication systems. However, reaching a high level of performance is difficult. This study introduces a LNA for radio frequency front-end receivers with a frequency range of 6-12 GHz. The planned LNA contains a two-stage high-electron-mobility transistor cascade amplifier with a minimum measured noise figure of 0.8 dB and a peak gain of 25 dB at room temperature. The proposed LNA is based on a gallium arsenide field-effect transistor transistor (CE3512K2) because of its good low-noise performance at microwave frequency bands. The measured results demonstrate that the proposed LNA is perfectly matched over the whole operational frequency spectrum of the input/output ports (|S-11|<-10 dB, |S-22|<-10 dB). Also, output P1dB and input P1dB are, respectively, +4 and -19 dBm for this design. The suggested LNA is suitable for C and X frequency band applications.
展开▼
