Anisotropic Properties of Quasi-1D In_4Se_3: Mechanical Exfoliation, Electronic Transport, and Polarization-Dependent Photoresponse

Vorobeva Nataliia S.; Lipatov Alexey; Torres AngelDai JunAbourahma JehadLe DuyDhingra ArchitGilbert Simeon J.Galiy Pavlo VNenchuk Taras M.Muratov Dmitry S.Rahman Talat S.Zeng Xiao ChengDowben Peter A.Sinitskii Alexander

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Anisotropic Properties of Quasi-1D In_4Se_3: Mechanical Exfoliation, Electronic Transport, and Polarization-Dependent Photoresponse

机译：Anisotropic Properties of Quasi-1D In_4Se_3: Mechanical Exfoliation, Electronic Transport, and Polarization-Dependent Photoresponse

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Theoretical and experimental investigations of various exfoliated samples taken from layered In4Se3 crystals are performed. In spite of the ionic character of interlayer interactions in In4Se3 and hence much higher calculated cleavage energies compared to graphite, it is possible to produce few-nanometer-thick flakes of In4Se3 by mechanical exfoliation of its bulk crystals. The In4Se3 flakes exfoliated on Si/SiO2 have anisotropic electronic properties and exhibit field-effect electron mobilities of about 50 cm(2) V-1 s(-1) at room temperature, which are comparable with other popular transition metal chalcogenide (TMC) electronic materials, such as MoS2 and TiS3. In4Se3 devices exhibit a visible range photoresponse on a timescale of less than 30 ms. The photoresponse depends on the polarization of the excitation light consistent with symmetry-dependent band structure calculations for the most expected ac cleavage plane. These results demonstrate that mechanical exfoliation of layered ionic In4Se3 crystals is possible, while the fast anisotropic photoresponse makes In4Se3 a competitive electronic material, in the TMC family, for emerging optoelectronic device applications.

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《Advanced functional materials》 |2021年第52期|2106459.1-2106459.11|共11页
作者
Vorobeva Nataliia S.; Lipatov Alexey; Torres AngelDai JunAbourahma JehadLe DuyDhingra ArchitGilbert Simeon J.Galiy Pavlo VNenchuk Taras M.Muratov Dmitry S.Rahman Talat S.Zeng Xiao ChengDowben Peter A.Sinitskii Alexander;
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Univ Nebraska, Dept Chem, Lincoln, NE 68588 USA;

Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA;

Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USAIvan Franko Natl Univ Lviv, Dept Elect Ivan Franko Natl Univ, UA-79000 Lvov, UkraineUniv Nebraska, Dept Chem, Lincoln, NE 68588 USA|Natl Univ Sci & Technol MISIS, Moscow 119991, RussiaUniv Nebraska, Dept Chem, Lincoln, NE 68588 USA|Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USAUniv Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA|Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA;

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band structures; electronic properties; In; Se-4; (3); mechanical exfoliation; photoresponse; quasi-1D materials; transition metal chalcogenides;

Anisotropic Properties of Quasi-1D In_4Se_3: Mechanical Exfoliation, Electronic Transport, and Polarization-Dependent Photoresponse

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