Dramatic Tuning of the Topological Hall Effect in A_xRhO_2 (A = K, Rb, and Cs) Crystals by Electron Concentration or Cation

Yang-Yang Lv; Bin-Bin Zhang; Xiao LiDajun LinShu-Hua YaoYe XiongJian ZhouY. B. ChenHongming WengY. G. ShiMing-Hui LuYan-Feng Chen

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Dramatic Tuning of the Topological Hall Effect in A_xRhO_2 (A = K, Rb, and Cs) Crystals by Electron Concentration or Cation

机译：Dramatic Tuning of the Topological Hall Effect in A_xRhO_2 (A = K, Rb, and Cs) Crystals by Electron Concentration or Cation

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Topological Hall effect, being an unconventional anomalous Hall effect,is originated from the real-space Berry curvature caused by the nontrivialtopological spin textures in materials. Manipulations of nontrivial magneticstructure and related topological Hall effect are very important for the studyof the chiral magnet. Herein, it is experimentally observed that the significanttopological Hall conductivity σ_(xy) in antiferromagnetic K0.5RhO2 can reach3.5% of ν = 1 quantum conductivity below 20 K. Furthermore, by adjustingthe concentration of K-cation different from 0.5 in K_xRhO_2 or substituting theK cations by Rb or Cs to form Rb_(0.5)RhO_2 or Cs_(0.5)RhO_2, it is observed that thetopological Hall effect is much weakened or even disappeared. This evolution,verified by the theoretical calculations, is attributed to the unstableground state of the non-coplanar spin structure in K_xRhO_2 (x = 0.4 and 0.6)and Cs_(0.5)RhO_2. The significantly tunable topological Hall effect in A_xRhO_2makes it prospective on logical/sensor devices of spintronics.

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来源
《Advanced functional materials》 |2023年第11期|2211214.1-2211214.9|共9页
作者
Yang-Yang Lv; Bin-Bin Zhang; Xiao LiDajun LinShu-Hua YaoYe XiongJian ZhouY. B. ChenHongming WengY. G. ShiMing-Hui LuYan-Feng Chen;
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National Laboratory of Solid-State Microstructures and Department ofMaterials Science and EngineeringNanjing UniversityNanjing 210093, China Jiangsu Key Laboratory of Artificial Functional MaterialsNanjing UniversityNanjing 210093, China;

School of Physical Science and TechnologyShanghaiTech UniversityShanghai 200031, China;

National Laboratory of Solid-State Microstructures and Department ofPhysicsNanjing UniversityNanjing 210093, ChinaCollege of Physical Science and TechnologyNanjing Normal UniversityNanjing 210097, ChinaBeijing National Laboratory for Condensed Matter Physics, and Instituteof PhysicsChinese Academy of SciencesBeijing 100190, ChinaNational Laboratory of Solid-State Microstructures and Department ofMaterials Science and EngineeringNanjing UniversityNanjing 210093, China Jiangsu Key Laboratory of Artificial Functional MaterialsNanjing UniversityNanjing 210093, China Collaborative Inn;

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electronic transports; magnetism; single crystals; topological Hall effects;

Dramatic Tuning of the Topological Hall Effect in A_xRhO_2 (A = K, Rb, and Cs) Crystals by Electron Concentration or Cation

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