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Enhanced Thermoelectric Performance in GeTe by Synergy of Midgap state and Band Convergence

机译:Enhanced Thermoelectric Performance in GeTe by Synergy of Midgap state and Band Convergence

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摘要

The good co-existence of midgap state and valence band degeneracy isrealized in Bi-alloyed GeTe through the In-Cd codoping to play different butcomplementary roles in the valence band structure modification. In dopinginduces midgap state and results in a considerably improved Seebeck coefficientnear room temperature, while Cd doping significantly increases theSeebeck coefficient in the mid-high temperature region by promoting thevalence band convergence. The synergistic effects obviously increase thedensity of state effective mass from 1.39 to 2.65 m0, and the correspondingcarrier mobility still reaches 34.3 cm~2 V~(?1) s~(?1) at room temperature. Moreover,the Bi-In-Cd co-alloying introduces various phonon scattering centersincluding nanoprecipitates and strain field fluctuations and suppresses thelattice thermal conductivity to a rather low value of 0.56 W m~(?1) K~(?1) at 600 K.As a result, the Ge_(0.89)Bi_(0.06)In_(0.01)Cd_(0.04)Te sample obtains excellent thermoelectricproperties of zT_(max) ≈2.12 at 650 K and zT_(avg) ≈1.43 between 300 and 773 K.This study illustrates that the thermoelectric performance of GeTe can beoptimized in a wide temperature range through the synergy of midgap stateand valence band convergence.

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