Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

Hou Yanliang; Liu Yang; Yang XuxinMao HongyingShi ZhongWu ShuxiangLu BinYe Quan-LinYe Jianting

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Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

机译：Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

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Understanding the Verwey transition in magnetite (Fe3O4), a strongly correlated magnetic oxide, is a one-century-old topic that recaptures great attention because of the recent spectroscopy studies revealing its orbital details. Here, the modulation of the Verwey transition by tuning the orbital configurations with ionic gating is reported. In epitaxial magnetite thin films, the insulating Verwey state can be tuned continuously to be metallic showing that the low-temperature trimeron states can be controllably metalized by both the gate-induced oxygen vacancies and proton doping. The ionic gating can also reverse the sign of the anomalous Hall coefficient, indicating that the metallization is associated with the presence of a new type of carrier with competing spin. The variable spin orientation associated with the sign reversal is originated from the structural distortions driven by the gate-induced oxygen vacancies.

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《Advanced functional materials》 |2021年第47期|2104816.1-2104816.8|共8页
作者
Hou Yanliang; Liu Yang; Yang XuxinMao HongyingShi ZhongWu ShuxiangLu BinYe Quan-LinYe Jianting;
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作者单位

Hangzhou Normal Univ, Dept Phys, Hangzhou Key Lab Quantum Matter, Hangzhou 311121, Peoples R China;

Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China|Tongji Univ, Sch Phys Sci & Engn, Pohl Inst Solid State Phys, Shanghai 200092, Peoples R China;

Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaHangzhou Normal Univ, Dept Phys, Hangzhou Key Lab Quantum Matter, Hangzhou 311121, Peoples R China|Univ Groningen, Zernike Inst Adv Mat, Device Phys Complex Mat, Nijenborgh 4, NL-9747 AG Groningen, NetherlandsUniv Groningen, Zernike Inst Adv Mat, Device Phys Complex Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands;

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anomalous Hall effect; ionic gating; strongly correlated oxide; Verwey transition;

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

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