A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS

Jiayang Yu; Jixin Chen; Peigen ZhouHuanbo LiZuojun WangZekun LiZhe ChenPinpin YanDebin HouHao GaoWei Hong

首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS

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A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS

机译：A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS

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摘要

This article presents a broadband sub-terahertz (THz) power amplifier (PA) with a low-loss four-way power combiner. The proposed power combiner consists of an improved zero-degree combiner (ZDC) and a three-conductor Marchand balun simultaneously achieving broadband matching and power combining. The proposed three-conductor Marchand balun adopts a dual- $LC$ tank technique by merging two resonators, and it can be equivalent to a transformer-based multi-resonating network. The power distribution is realized by one input power splitter generating two pairs of differential signals and two parallel 1-to-2 active power splitters. This hybrid distribution driving network further enhances efficiency and power gain. Based on these improvements, a high-output-power sub-THz PA with superior efficiency has been fabricated in the 130-nm SiGe bipolar complementary metal oxide silicon field effect transistor (BiCMOS) technology. The three-stage PA achieves a peak power gain of 16.4 dB, 3-dB small-signal gain bandwidth of 52 GHz from 211 to 263 GHz, a measured maximum saturated output power of 14.7 dBm at 224 GHz, and a peak power-added efficiency (PAE) of 3.13% at 220 GHz. The folded input splitter and extremely compact power combining methodology lead to a core area of 770 $mu text{m},,times ,,280,,mu text{m}$ .

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来源
《IEEE Journal of Solid-State Circuits》 |2023年第2期|332-344|共13页
作者
Jiayang Yu; Jixin Chen; Peigen ZhouHuanbo LiZuojun WangZekun LiZhe ChenPinpin YanDebin HouHao GaoWei Hong;
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作者单位

State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing, China;

Department of Electrical Engineering, Integrated Circuit Group, Eindhoven University of Technology, Eindhoven, The Netherlands|School of Information Science and Engineering, Southeast University, Nanjing, China;

State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing, China|Purple Mountain Laboratories, Nanjing, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Baluns; Power generation; Impedance; Gain; Topology; Bandwidth; Network topology;

A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS

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