...
首页> 外文期刊>IEEE microwave magazine >Electrooptic Modulation in Future All-Silicon Integrated Microwave Circuits: An Introduction of Gated MOSFET Devices With Increased Optical Emissions
【24h】

Electrooptic Modulation in Future All-Silicon Integrated Microwave Circuits: An Introduction of Gated MOSFET Devices With Increased Optical Emissions

机译:Electrooptic Modulation in Future All-Silicon Integrated Microwave Circuits: An Introduction of Gated MOSFET Devices With Increased Optical Emissions

获取原文
获取原文并翻译 | 示例
           

摘要

With the explosive growth of human society's demand for information [1], microwaves have become a vital information carrier for applications such as wireless communication, military radar, and electronic countermeasures. However, the processing rates and bandwidth of traditional microwave processing circuits are limited, which can create an electronic bottleneck for high-frequency microwave signals. Relying solely on traditional electrical systems has not been enough to meet the emerging demand for high-frequency microwave signal generation, transmission, and processing [2], [3]. At the same time, broadband and low-loss photonics have led to an ever-increasing interest in generating, processing, controlling, and distributing microwave and millimeter-wave (mm-wave) signals for applications such as broadband wireless access networks, sensor networks, radar, satellite communication, instrumentation, and warfare systems [4]. In response, beginning in the 1990s, these two technologies merged and produced a new interdisciplinary field known as microwave photonics [5], [6].

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号