Pb-Bi-S thin films by chemical deposition - optical and electrical properties

Moreno-Garcia H.; Sifuentes-Turrubiartes J.; Chavez-Veloz S.G.Rodriguez A.G.

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Pb-Bi-S thin films by chemical deposition - optical and electrical properties

机译：Pb-Bi-S thin films by chemical deposition - optical and electrical properties

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? 2023In this work, we report the procedure for the synthesis by chemical bath deposition of Heyrovskyite - Pb6Bi2S9 (H- LBS) thin films as a new emerging material. Homogeneous thin films are obtained, with a thickness from 95 to 130 nm. X-ray diffraction shows that deposited films are amorphous, and crystallize to the orthorhombic Pb6Bi2S9 phase when annealed in air at 150 °C. The deposited material has direct optical energy gap (Eg)from 1.31 to 1.62 eV. A heterojunction formed by H- LBS/PbS shows diode behavior with the generation of open circuit voltage (VOC) of 285 mV, short circuit current density (JSC) of 13.3 mA/cm2 and power conversion efficiency (PCE) of 0.98%, evidencing the feasible application of H- LBS thin films as absorbers in solar cells.

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《Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films》 |2023年第30期|139866.1-139866.9|共9页
作者
Moreno-Garcia H.; Sifuentes-Turrubiartes J.; Chavez-Veloz S.G.Rodriguez A.G.;
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Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología (CIACYT) Universidad Autónoma de San Luis Potosí (UASLP);

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正文语种英语
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Chemical bath deposition; Emerging material; Lead bismuth sulfide (H-LBS); Solar Cell; Thin film;

Pb-Bi-S thin films by chemical deposition - optical and electrical properties

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