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首页> 外文期刊>Advanced functional materials >2D Cairo Pentagonal PdPS: Air-Stable Anisotropic Ternary Semiconductor with High Optoelectronic Performance
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2D Cairo Pentagonal PdPS: Air-Stable Anisotropic Ternary Semiconductor with High Optoelectronic Performance

机译：2D Cairo Pentagonal PdPS: Air-Stable Anisotropic Ternary Semiconductor with High Optoelectronic Performance

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摘要

Pentagonal 2D materials as a new member in the 2D material family have attracted increasing attention due to the exotic physical properties originating from the unique Cairo pentagonal tiling topology. Herein, the penta-PdPS atomic layers as a new air-stable 2D semiconductor with the unique puckered pentagonal low-symmetry structure are successfully exfoliated from bulk crystals grown via chemical vapor transport (CVT). Notably, 2D penta-PdPS exhibits outstanding electronic and optoelectronic performance under 650 nm laser: high electron mobility of approximate to 208 cm(2) V-1 s(-1), an ultrahigh on/off ratio of approximate to 10(8), a high photoresponsivity of 5.2 x 10(4) A W-1, a high photogain of 1.0 x 10(5), an ultrahigh detectivity of 1.0 x 10(13) Jones, respectively. Significantly, the exceptional puckered pentagonal atomic structure of 2D PdPS makes it strong in-plane anisotropy in optical, electronic, and optoelectronic properties, demonstrating a sizeable anisotropic ratio of carrier mobility and photocurrent with the value of up to 3.9 and 2.3, respectively. These excellent properties make 2D Cairo Pentagonal PdPS a potential candidate in nanoelectronics, optoelectronics, polarized-nanoelectronics, which will significantly promote the development of 2D materials.

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