Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

Naoki Wada; Jiang Pu; Yuhei TakaguchiWenjin ZhangZheng LiuTakahiko EndoToshifumi IrisawaKazunari MatsudaYuhei MiyauchiTaishi TakenobuYasumitsu Miyata

首页> 外文期刊>Advanced functional materials >Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

【24h】

Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

机译：Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

Atomically thin transition metal dichalcogenides (TMDCs) are attractivematerials for future optoelectronic applications because of their excellentelectrical, optical, and quantum (spin-valley) properties. In particular,in-plane heterostructures based on TMDC monolayers provide opportunitiesto directly modulate band structures and lattice strains by the spatialdistribution of constituent elements, leading to efficient control of theircarrier transport and recombination. However, it is still challenging tocreate light-emitting devices using such in-plane heterostructures becauseof the technical difficulties associated with sample/device fabrication. Thisstudy demonstrated interfacial electroluminescence (EL) in diverse TMDCmonolayer in-plane heterostructures. Various combinations of large-area,single-crystalline in-plane heterostructures with sharp interfaces are grownby chemical vapor deposition, followed by the adoption of electrolyte-basedlight-emitting devices to observe EL. The fine heterostructures enabled thecapture of the linear-shaped EL fixed along the junction interfaces. Significantly,the WS_2/WSe_2 in-plane heterostructures exhibited circularly polarizedEL with polarizability of 10% at room temperature. This can be explainedby the interfacial strain-mediated electronic structure evolution, in whichthe combination of electric fields and strain-induced valley drifts realizesselective EL from the K/K’ valley. These findings pave the way for expandingthe potential of monolayer in-plane heterostructures for use in functionaloptoelectronic devices.

著录项

来源
《Advanced functional materials》 |2022年第40期|2203602.1-2203602.9|共9页
作者
Naoki Wada; Jiang Pu; Yuhei TakaguchiWenjin ZhangZheng LiuTakahiko EndoToshifumi IrisawaKazunari MatsudaYuhei MiyauchiTaishi TakenobuYasumitsu Miyata;
展开▼
作者单位

Department of PhysicsTokyo Metropolitan UniversityTokyo 192-0397, Japan;

Department of Applied PhysicsNagoya UniversityNagoya 464-8603, Japan;

Institute of Advanced EnergyKyoto UniversityKyoto 611-0011, JapanInnovative Functional Materials Research InstituteAISTNagoya 463-8560, JapanDevice Technology Research InstituteAISTTsukuba 305-8562, Japan;

展开▼
收录信息
原文格式 PDF
正文语种英语
中图分类
关键词
chemical vapor deposition; chiral electroluminescence; in-plane heterostructures; light-emitting diodes; transition metal dichalcogenides;

Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

摘要

著录项

相关主题

期刊订阅