Fast Photothermoelectric Response in CVD-Grown PdSe_2 Photodetectors with In-Plane Anisotropy

Li Gang; Yin Shiqi; Tan ChaoyangChen LijieYu MengxiLi LiangYan Feng

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Fast Photothermoelectric Response in CVD-Grown PdSe_2 Photodetectors with In-Plane Anisotropy

机译：Fast Photothermoelectric Response in CVD-Grown PdSe_2 Photodetectors with In-Plane Anisotropy

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PdSe2, a star photosensitive functional material, has been successfully used in photodetectors based on sensing mechanisms of photogating, photoconductive, and photovoltaic effects. Here, a photothermoelectric (PTE) effect is observed in photodetectors based on PdSe2 flakes grown by chemical vapor deposition. The unique photoresponse arises from an electron temperature gradient instead of electron-hole separation. Direct evidence of the PTE effect is confirmed by a nonlocal photoresponse under zero bias. Moreover, the PdSe2 photodetector shows high performance in terms of ultrafast response speed (4 mu s), high air-stability, broadband spectrum photodetection, reasonable responsivity, and anisotropic optical response. This study paves a new way for developing high-performance photodetectors based on PdSe2 layered materials.

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《Advanced functional materials》 |2021年第40期|2104787.1-2104787.7|共7页
作者
Li Gang; Yin Shiqi; Tan ChaoyangChen LijieYu MengxiLi LiangYan Feng;
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作者单位

Anhui Univ, Informat Mat & Intelligent Sensing Lab Anhui Prov, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China;

Anhui Univ, Informat Mat & Intelligent Sensing Lab Anhui Prov, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China|Anhui Univ, Photoelect Convers Energy Mat & Devices Key Lab A, Hefei 230601, Peoples R China;

Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong 999077, Peoples R China;

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正文语种英语
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air-stable PdSe; (2); anisotropic response; fast response; photothermoelectric;

Fast Photothermoelectric Response in CVD-Grown PdSe_2 Photodetectors with In-Plane Anisotropy

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