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首页> 外文期刊>Advanced functional materials >Synthesis of 2D α-GeTe Single Crystals and α-GeTe/Wse_2 Heterostructures with Enhanced Electronic Performance
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Synthesis of 2D α-GeTe Single Crystals and α-GeTe/Wse_2 Heterostructures with Enhanced Electronic Performance

机译：Synthesis of 2D α-GeTe Single Crystals and α-GeTe/Wse_2 Heterostructures with Enhanced Electronic Performance

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摘要

Two-dimensional (2D) materials have attracted extensive attention due totheir important prospects in electronics and optoelectronics. Synthesizingnew 2D materials, characterizing their properties, and developing their applicationsare still important topics. Herein, the synthesis of α-GeTe nanoplateson different substrates via the chemical vapor deposition process and the systematicalinvestigation of their structure and electrical properties, is reported.By controlling the synthesis temperature and carrier gas, α-GeTe nanoplates,with a lateral dimension up to 30 μm and a thickness down to 1.2 nm, whichcorresponds to the thickness of one unit cell, can be obtained on 2D Wse_2substrate. Electrical transport studies show 2D α-GeTe nanoplates have anexcellent conductivity (9.33 × 105 S m~(?1) and an extraordinary breakdowncurrent density (6.1× 10~7 A cm~(?2)). Compared with traditional WSe2 transistorswith deposited metal electrodes, the Wse_2 transistors with the metallicα-GeTe nanoplates as van der Waals metal electrodes achieved much betterperformance, such as higher on-state current (from 7.83 to 23.23 μA μm~(?1))and electron mobility (from 16.5 to 75.0 cm~2 V~1 S~1). This study demonstratesan effective pathway to achieve ultrathin 2D materials and provides an accessiblestrategy to improve the performance of 2D electronic devices.

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