The optical properties of GeSe_2 nano-films prepared by CVD

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The optical properties of GeSe_2 nano-films prepared by CVD

机译：CVD制备GeSe_2纳米薄膜的光学性能

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GeSe2 Nano-Films (GeSe2NFMs) were prepared by chemical vapor deposition (CVD). The nanostructures of the GeSe2NFMs were revealed by X-ray diffraction and Raman spectroscopy, respectively. The linear optical properties of the samples have been studied by absorption spectroscopy. The nonlinear optical properties of the GeSe2NFMs have been studied by Z-scan technique with femtosecond pulses at the wavelength of 1030 nm. The measured band gap of GeSe2NFMs is 2.33eV, and the nonlinear absorption coefficient beta(eff) is about 1.344*10(-7) cm/W, which is a saturated absorption. In addition, in the fluorescence emission spectrum of GeSe2NFM, we found emission peaks in the red and infrared light regions with a wavelength of 760 nm. We found that GeSe2NFMs prepared by CVD has a larger band gap and a larger nonlinear absorption coefficient than the doped GeSe2. These studies indicate the application of GeSe2NFMs in laser emitters and nonlinear optical devices, and also provide a reference for subsequent research on nonlinear optical characteristics.

机译：采用化学气相沉积（CVD）技术制备了GeSe2纳米薄膜（GeSe2NFMs）。通过X射线衍射和拉曼光谱分别揭示了GeSe2NFMs的纳米结构。通过吸收光谱研究了样品的线性光学特性。采用Z扫描技术研究了GeSe2NFMs在1030 nm波长处的飞秒脉冲的非线性光学性质.GeSe2NFMs测得的带隙为2.33eV，非线性吸收系数β（eff）约为1.344*10（-7） cm/W，为饱和吸收。此外，在GeSe2NFM的荧光发射光谱中，我们在波长为760 nm的红光和红外光区发现了发射峰。我们发现，CVD制备的GeSe2NFMs比掺杂的GeSe2具有更大的带隙和非线性吸收系数。这些研究表明了GeSe2NFMs在激光发射器和非线性光学器件中的应用，也为后续非线性光学特性的研究提供了参考。

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《Optical materials》 |2020年第2期|109697.1-109697.5|共5页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
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CVD; GeSe2 NFMs; Nonlinear optical properties;

机译：CVD;GeSe2 NFMs;非线性光学特性;

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The optical properties of GeSe_2 nano-films prepared by CVD

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