Graphene Growth across the Twin Boundaries of Copper Substrate

Deping Huang; Yinwu Duan; Leining ZhangXin liYongna ZhangFeng DingJing GuoXiaoxu HuangZhancheng LiHaofei Shi

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Graphene Growth across the Twin Boundaries of Copper Substrate

机译：Graphene Growth across the Twin Boundaries of Copper Substrate

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Twin crystals, the formation energy of which is much smaller than that ofordinary grain boundaries, widely exist in the annealed copper and are hard toeliminate. The study of the effects of twin boundaries on graphene growth is ofgreat significance to the understanding of graphene epitaxy. However, there arefew studies on the effects of twin boundaries on the graphene growth process.Here, this article experimentally demonstrates that graphene islands are subjectedto different compressive strains from the opposite copper crystal planeafter growing across the twin boundary. Further results reveal that graphenecan grow across different twin boundaries, such as atom steps, narrow valleys,and even micron-scale ridges, without forming linear defect. Therefore, straininducedgraphene doping can be manipulated with the type of twin boundariesand the location on the twin crystals. The transition region where the degree ofdoping changes monotonically across the twin boundary further confirms thedifferent spatial doping phenomena of graphene islands. This work providesa new perspective for understanding the effect of twin boundaries on thegraphene epitaxy, which is expected to have a potential impact on growinghigh-quality graphene on twinned copper substrates.

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来源
《Advanced functional materials》 |2022年第42期|2202415.1-2202415.9|共9页
作者
Deping Huang; Yinwu Duan; Leining ZhangXin liYongna ZhangFeng DingJing GuoXiaoxu HuangZhancheng LiHaofei Shi;
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作者单位

Chongqing UniversityChongqing 400044, P.R. China Chongqing Institute of Green and Intelligent TechnologyChinese Academy of SciencesChongqing 400714, P. R. China Chongqing SchoolUniversity of Chinese Academy of SciencesChongqing 400714, P. R. China;

Center for Multidimensional Carbon Materials (CMCM)Institute for Basic Science (IBS)Ulsan 44919, Republic of Korea Department of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan 44919, Republic of Korea;

International Joint Laboratory for Light Alloys (MOE)College of Materials Science and EngineeringChongqing UniversityChongqing 400044, P.R. ChinaChongqing Institute of Green and Intelligent TechnologyChinese Academy of SciencesChongqing 400714, P. R. ChinaChongqing Engineering Research Center of Graphene Film ManufacturingChongqing 401329, P. R. China Chongqing Graphene Technology Innovation CenterChongqing 401329, P. R. China;

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dopants; graphene islands; strains; twin boundaries;

Graphene Growth across the Twin Boundaries of Copper Substrate

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