Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Zhang Xiaoyue; Tang Ning; Yang LiuyunFang ChiWan CaihuaLiu XingchenZhang ShixiongZhang YunfanWang XinqiangLu YuanGe WeikunHan XiufengShen Bo

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Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

机译：Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

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The spin injection into 2D electron gas (2DEG) in AlN/GaN heterostructures is studied by magneto-transport measurements. An ultrathin AlN layer at the hetero-interface acts as a barrier to form high-quality 2DEG in the triangular quantum well and a tunneling barrier for the spin injection to overcome the conductance mismatch issue. In this study, Hanle signals and inversed Hanle signals are observed, proving that the spin injection is achieved in the 2DEG in the AlN/GaN heterostructure rather than in the interfacial states. The spin-relaxation time in 2DEG at 8 K is found to be as long as 860 ps, which almost keeps constant with bias and decreases with increasing temperature. The spin-relaxation process is illustrated as Rashba spin-orbit coupling dominated D'yakonov Perel' mechanisms above 8 K. These results show the promising potential of 2DEG in AlN/GaN heterostructures for spin field-effect transistor applications.

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来源
《Advanced functional materials》 |2021年第15期|2009771.1-2009771.6|共6页
作者
Zhang Xiaoyue; Tang Ning; Yang LiuyunFang ChiWan CaihuaLiu XingchenZhang ShixiongZhang YunfanWang XinqiangLu YuanGe WeikunHan XiufengShen Bo;
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作者单位

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China|Peking Univ, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China|Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peo;

Univ Lorraine, Inst Jean Lamour, CNRS UMR7198, Campus ARTEM,2 Allee Andre Guinier,BP 50840, F-54011 Nancy, FranceChinese Acad Sci, Univ Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

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AlN tunnel barrier; AlN; GaN heterostructures; spin injection; 2D electron gas;

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

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