Charge-Selective, Narrow-Gap Indium Arsenide Quantum Dot Layer for Highly Stable and Efficient Organic Photovoltaics

Park Youngsang; Bae Sung Yong; Kim TaewanPark SeongminOh Jae TaekShin DaekwonChoi MahnminKim HyojungKim BoraLee Doh C.Song Jung HoonChoi HyosungJeong SoheeKim Younghoon

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Charge-Selective, Narrow-Gap Indium Arsenide Quantum Dot Layer for Highly Stable and Efficient Organic Photovoltaics

机译：Charge-Selective, Narrow-Gap Indium Arsenide Quantum Dot Layer for Highly Stable and Efficient Organic Photovoltaics

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The past decade has seen a dramatic surge in the power conversion efficiency (PCE) of next-generation solution-processed thin-film solar cells rapidly closing the gap in PCE of commercially-available photovoltaic (PV) cells. Yet the operational stability of such new PVs leaves a lot to be desired. Specifically, chemical reaction with absorbers via high-energy photons transmitted through the typically-adapted metal oxide electron transporting layers (ETLs), and photocatalytic degradation at interfaces are considered detrimental to the device performance. Herein, the authors introduce a device architecture using the narrow-gap, Indium Arsenide colloidal quantum dots (CQDs) with discrete electronic states as an ETL in high-efficiency solution-processed PVs. High-performing PM6:Y6 organic PVs (OPVs) achieve a PCE of 15.1%. More importantly, as the operating stability of the device is significantly improved, retaining above 80% of the original PCE over 1000 min under continuous illumination, a Newport-certified PCE of 13.1% is reported for nonencapsulated OPVs measured under ambient air. Based on operando studies as well as optical simulations, it suggested that the InAs CQD ETLs with discrete energy states effectively cut-off high-energy photons while selectively collecting electrons from the absorber. The findings of this works enable high-efficiency solution-processed PVs with enhanced durability under operating conditions.

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《Advanced energy materials》 |2022年第24期|2104018.1-2104018.13|共13页
作者
Park Youngsang; Bae Sung Yong; Kim TaewanPark SeongminOh Jae TaekShin DaekwonChoi MahnminKim HyojungKim BoraLee Doh C.Song Jung HoonChoi HyosungJeong SoheeKim Younghoon;
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Sungkyunkwan Univ, Dept Energy Sci, 2066 Seobu Ro, Suwon 86582, Gyeonggi, South Korea|Korea Adv Inst Sci & Technol KAIST, Dept Chem & Biomol Engn, 291 Daehak Ro, Daejeon 34141, South Korea;

Hanyang Univ, Dept Chem, Res Inst Convergence Basic Sci, 222 Wangsimni Ro, Seoul 04763, South Korea|Hanyang Univ, Dept Chem, Inst Nano Sci & Technol, 222 Wangsimni Ro, Seoul 04763, South Korea;

Sungkyunkwan Univ, Dept Energy Sci, 2066 Seobu Ro, Suwon 86582, Gyeonggi, South KoreaSungkyunkwan Univ, Artificial Atom & Quantum Mat Ctr, 2066 Seobu Ro, Suwon 86582, Gyeonggi, South KoreaKorea Adv Inst Sci & Technol KAIST, Dept Chem & Biomol Engn, 291 Daehak Ro, Daejeon 34141, South KoreaMokpo Natl Univ, Dept Phys, 1666 Yeongsan Ro, Jeollanam Do 58554, South KoreaSungkyunkwan Univ, Dept Energy Sci, 2066 Seobu Ro, Suwon 86582, Gyeonggi, South Korea|Sungkyunkwan Univ, Artificial Atom & Quantum Mat Ctr, 2066 Seobu Ro, Suwon 86582, Gyeonggi, South Korea|Sungkyunkwan Univ, SKKU Inst Energy Sci & Technol SIEST, 2066 SeoKookmin Univ, Dept Chem, 77 Jeongneung Ro, Seoul 02707, South Korea;

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device stability; electron transport layers; InAs quantum dots; narrow-gap; organic photovoltaics;

Charge-Selective, Narrow-Gap Indium Arsenide Quantum Dot Layer for Highly Stable and Efficient Organic Photovoltaics

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