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High-Ranged ZT Value Promotes Thermoelectric Cooling and Power Generation in n-Type PbTe

机译:High-Ranged ZT Value Promotes Thermoelectric Cooling and Power Generation in n-Type PbTe

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摘要

Excellent thermoelectric cooling and power generation are simultaneously realized in an n-type PbTe-based thermoelectric material. The cooling temperature difference (Delta T) of approximate to 15.6 K, maximum power density of approximate to 0.4 W cm(-2) and conversion efficiency of approximate to 1.5% with T-C = 295 K and T-H = 765 K can be obtained in a single-leg device composed of PbTe-30%SnSe-1.5%Cu. This advanced thermoelectric performance in n-type PbTe-30%SnSe-1.5%Cu mainly originates from its high-ranged ZT value achieved through optimizing its bandgap, carrier density, and microstructure. The bandgap in PbTe is first reduced by SnSe alloying to facilitate the carrier transport properties at low temperature range (300-573 K). With further tuned carrier density, the average power factor increases from approximate to 10.2 mu W cm(-1) K-2 in Pb0.985Sb0.015Te-30%SnSe to approximate to 16.2 mu W cm(-1) K-2 in PbTe-30%SnSe-1.5%Cu at 300-773 K. Moreover, microstructure observation reveals high-density dislocations in PbTe-30% SnSe-1.5% Cu, which can dramatically suppress the room-temperature lattice thermal conductivity from approximate to 2.21 Wm(-1) K-1 in Pb0.985Sb0.015Te to approximate to 0.53 Wm(-1) K-1 in PbTe-30%SnSe-1.5%Cu. As a result, a room-temperature ZT value of approximate to 0.7 and high average ZT value (ZT(ave)) of approximate to 0.98 can be obtained in PbTe-30%SnSe-1.5%Cu at 300-573 K, which makes its performance comparable to the commercial n-type Bi2Te3-based thermoelectric material.

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