Ternary Transition Metal Chalcogenide Nb_2Pd_3Se_8: A New Candidate of 1D Van der Waals Materials for Field-Effect Transistors

Jeong Byung Joo; Choi Kyung Hwan; Jeon JihoYoon Sang OkChung You KyoungSung DongchulChae SudongKim Bum JunOh SeungbaeLee Sang HoonWoo ChaeheonKim Tae YeongAhn JungyoonLee Jae-HyunHuh JoonsukYu Hak KiChoi Jae-Young

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Ternary Transition Metal Chalcogenide Nb_2Pd_3Se_8: A New Candidate of 1D Van der Waals Materials for Field-Effect Transistors

机译：Ternary Transition Metal Chalcogenide Nb_2Pd_3Se_8: A New Candidate of 1D Van der Waals Materials for Field-Effect Transistors

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In this work, high-quality 1D van der Waals (vdW) Nb2Pd3Se8 is synthesized, showing an excellent scalability from bulk to single-ribbon due to weakly bonded repeating unit ribbons. The calculation of electronic band structures confirmed that this novel Nb2Pd3Se8 is a semiconducting material, displaying indirect-to-direct bandgap transition with decreasing the number of unit-ribbons from bulk to single. Field effect transistors (FETs) fabricated on the mechanically exfoliated Nb2Pd3Se8 nanowires exhibit n-type transport characteristics at room temperature, resulting in the values for the electron mobility and I-on/I-off ratio of 31 cm(2) V-1 s(-1) and approximate to 10(4), respectively. Through transport measurements at various temperatures from room temperature down to 90 K, it is confirmed that Nb2Pd3Se8 FETs can achieve negligible Schottky barrier height (SBH) for the Au contacts at the temperature range, displaying clear ohmic contact characteristics. Furthermore, top-gated FETs fabricated with the Al2O3 dielectric layer are studied simultaneously with back-gated FETs.

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来源
《Advanced functional materials》 |2022年第4期|2108104.1-2108104.11|共18页
作者
Jeong Byung Joo; Choi Kyung Hwan; Jeon JihoYoon Sang OkChung You KyoungSung DongchulChae SudongKim Bum JunOh SeungbaeLee Sang HoonWoo ChaeheonKim Tae YeongAhn JungyoonLee Jae-HyunHuh JoonsukYu Hak KiChoi Jae-Young;
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作者单位

Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea;

Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea;

Sungkyunkwan Univ, Dept Chem, Suwon 16419, South KoreaAjou Univ, Dept Mat Sci & Engn, Suwon 16499, South Korea|Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaSungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea|Sungkyunkwan Univ, Dept Chem, Suwon 16419, South Korea|Sungkyunkwan Univ, Inst Quantum Biophys, Suwon 16419, South KoreaSungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea|Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea;

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1D van der Waals material; field-effect transistor; n-type behavior; schottky barrier height; synthesis;

Ternary Transition Metal Chalcogenide Nb_2Pd_3Se_8: A New Candidate of 1D Van der Waals Materials for Field-Effect Transistors

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