首页>
外文期刊>Crystallography reports
>X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer
【24h】
X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer
展开▼
机译：X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer
Epitaxial In0.53Ga0.47As films, grown on GaAs substrates with the (100) and (111)A crystallographic orientations in the standard high-temperature and low-temperature modes, have been studied using X-ray diffraction (XRD). The parameters of GaAs substrates and In0.5Ga0.5As films were matched using step metamorphic buffers. A technique for determining the strain parameters of the crystal structure of elastically strained In0.53Ga0.47As layers with the (111) crystallographic orientation using high-resolution XRD data has been developed. The strain parameters of the crystal structure of the samples under study are determined. A correlation between the tilt angle of the In0.53Ga0.47As layers with respect to the GaAs substrate and degree of their relaxation are calculated; layers with weak relaxation are found to have larger tilt angles with respect to the substrate.
展开▼
