Low-Voltage Magnetoelectric Coupling in Fe_(0.5)Rh_(0.5)/0.68PbMg_(1/3)Nb_(2/3)O_3-0.32PbTiO_3 Thin-Film Heterostructures

Zhao Wenbo; Kim Jieun; Huang XiaoxiZhang LeiPesquera DavidVelarde Gabriel A. P.Gosavi TanayLin Chia-ChingNikonov Dmitri E.Li HaiYoung Ian A.Ramesh RamamoorthyMartin Lane W.

首页> 外文期刊>Advanced functional materials >Low-Voltage Magnetoelectric Coupling in Fe_(0.5)Rh_(0.5)/0.68PbMg_(1/3)Nb_(2/3)O_3-0.32PbTiO_3 Thin-Film Heterostructures

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Low-Voltage Magnetoelectric Coupling in Fe_(0.5)Rh_(0.5)/0.68PbMg_(1/3)Nb_(2/3)O_3-0.32PbTiO_3 Thin-Film Heterostructures

机译：Low-Voltage Magnetoelectric Coupling in Fe_(0.5)Rh_(0.5)/0.68PbMg_(1/3)Nb_(2/3)O_3-0.32PbTiO_3 Thin-Film Heterostructures

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The rapid development of computing applications demands novel low-energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low-voltage control of magnetism in 30 nm Fe0.5Rh0.5/100 nm 0.68PbMg(1/3)Nb(2/3)O(3)-0.32PbTiO(3) (PMN-PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain-induced changes in the Fe0.5Rh0.5 mediated by voltages applied to the PMN-PT. We describe approaches to achieve high-quality, epitaxial growth of Fe0.5Rh0.5 on the PMN-PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin-film devices via studies of the anomalous Hall effect. By comparing the spin-flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach approximate to 7 x 10(-8) s m(-1) at 325 K while applying a -0.75 V bias.

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《Advanced functional materials》 |2021年第40期|2105068.1-2105068.8|共8页
作者
Zhao Wenbo; Kim Jieun; Huang XiaoxiZhang LeiPesquera DavidVelarde Gabriel A. P.Gosavi TanayLin Chia-ChingNikonov Dmitri E.Li HaiYoung Ian A.Ramesh RamamoorthyMartin Lane W.;
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Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA;

Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain|BIST, Campus UAB, Barcelona 08193, Spain;

Intel Corp, Components Res, Hillsboro, OR 97124 USAUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;

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anomalous Hall effect; magnetoelectric coupling; multiferroic heterostructures; nonvolatile; piezo-strain effect;

Low-Voltage Magnetoelectric Coupling in Fe_(0.5)Rh_(0.5)/0.68PbMg_(1/3)Nb_(2/3)O_3-0.32PbTiO_3 Thin-Film Heterostructures

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